Abstract
The purpose of this study is to develop a non–destructive evaluation method to elucidate internal structures of semiconductors with a high spatial resolution. For this purpose, we suggest to apply both current flows and magnetic fields to the sample in the horizontal plane. Hall voltages between the front and the back of the sample generate depending on the carrier velocity inside the material. And we expect that a surface potential changes in relation to the Hall voltage between the front and the back of the sample, which we call ″surface Hall potential″. In this study, surface Hall potential measurements are demonstrated by the Kelvin method with a silicon wafer and an SOI (Silicon on insulator) wafer in order to test the proposed method.
