Abstract
In the vertical method, it is considered that the accurate shape measurement of silicon wafers may not be carried out by various factors such as the deformation of silicon wafer caused by the clamping force, the anisotropy of the elastic modulus of monocrystal silicon and the displacement of supporting points during the measurement. As a result of analyzing those factors, it is proven that the effect of movement accuracy of the equipment on the shape measurement is predominant when using the prototype measuring system. It is also found that the compensation map of the equipment can be extracted and used to obtain the true shape of silicon wafer.
