Abstract
We have investigated effect of mechanical contribution on removal rate of SiO2 film by using ceria slurry. We polished 8″ wafers with SiO2 film by two types of ceria slurry at various polishing conditions. Friction force between SiO2 film and polishing pad was estimated by monitoring table current of polisher. We found linear dependency of removal rate on pressure and velocity, as known the Preston′s equation. However correlation coefficient was improved from 0.88–0.95 to 0.95–0.99 by using the product of torque and velocity instead of pressure and velocity. These results show removal rate of SiO2 film with ceria slurry depends on total mechanical energy input. In addition, effect of ceria particle size was discussed.
