A Study on Polishing Characteristics of New Bell–jar Type CMP Equipment (the 11th)

Abstract

Using a closed Bell–jar type CMP machine, assisted with a photocatalystic device, single crystal SiC substrates for power device have been polished to study its polishing mechanism. Under the polishing atmosphere of high–pressure oxygen gas inside the bell–jar, SiC substrates have been processed while the colloidal silica slurry, to which anatase or brookite type titanium oxide (TiO2) particles were added, was being irradiated by ultra–violet. As a result, the polishing rates have become 7 times higher than those under the normal atmosphere pressure. This can be interpreted that the photocatalysis of titanium oxide particles had an effect of producing active oxygen in the slurry, which made ′Si–C bond′ easily cut.