Development of the Polishing Pad Involving Abrasive Grains (3)

Abstract

In the last paper, using the Loosely Held Abrasive (LHA) pad that is effective in the polishing of silicon wafers, silicon oxide films are polished, polishing performance are investigated. In this paper, it became clear in the polishing of SiC single crystal with the LHA pad that the combination of oxidizing agent and dry mist is a high removal rate.