Abstract
The TiNi thin film should improve shape memory effects for MEMS applications. Therefore, the improvement of the crystal structure for the thin film is important. In this study, the ECR sputtering method was used for the creation of a good quality crystal structure because the chemical composition control can be easy and thin film can be deposited in a clean environment of the high vacuum. However, a lot of factors should be considered when TiNi thin films were deposited. Those sputtering conditions such as a substrate temperature, a post annealing temperature and time were investigated by the experimental design method to fabricate optimum TiNi crystal thin film. As a result, the substrate temperature was 99% significant, and the contribution rate was 83.15% when the crystal structure was defined as evaluation rate. In the growth only of TiNi (110), the post-anneal temperature was the most important factor, and the contribution rate over 50% was shown.
