Abstract
Recently, the improvement in the defect performance is demanded more strongly due to the shrinking of the semiconductor device technical node. Generally, it is considered that there is a correlation between the defect performance of oxide polishing and the numbers of agglomerated particles (Large Particle Counts) in slurry. However, phenomenons in which the number of defects is low even if there are a lot of Large Particle Counts (LPC) and vice versa occur. This phenomenons cannot be explained only by LPC. In this study, the item which the defect performance correlates with other than LPC was investigated, and it was clarified that it was stabilization of silica particle.
