Abstract
The demand of extremely thin wafer is increasing with the development of the miniaturization and high degree integration of ULSI. Current thinning technologies are facing great challenges with the continuous decrease of thickness of Si wafer. In this study, an integrated cup shaped grinding wheel (ICGW), which was combined high machining efficiency grinding with diamond segments and damage free grinding with chemo-mechanical grinding (CMG) segments, was developed to achieve high quality extremely thin Si wafer fabrication. Grinding experimental results show the minimum obtained Si wafer thickness was down to 15μm with the surface roughness (Ra) less than 0.7nm by using the developed ICGW.
