Abstract
Zr based metallic glass thin films can be a promising structural material for MEMS. We have tried to deposit ZrCuNiAl thin films by means of rf magnetron sputtering using an alloy target. The composition and internal stress of the films deposited at various conditions have been investigated. The composition of films changed in several at% from that of target alloy used. Ar working gas pressure was found to affect the composition of the deposited film. Ar gas pressure also played an important role in the internal stress of the deposited films as well as in that of crystal thin films. It changed from compression to tension with increasing the working gas pressure.
