Growth of c-BN films by means of rf magnetron sputtering

Effect of growth temperature and ion bombardment

Abstract

We have tried to fabricate the BN films containing cubic phase using rf magnetron sputtering. In this work, we have mainly studied the effect of substrate temperature and bias voltage on the growth of c-BN films. FT-IR measurements revealed that the films of almost c-BN single phase can be grown when a substrate temperature is 600C and a negative bias voltage higher than 100V is applied. It is considered that both high substrate temperature and ion bombardment must be necessary for the fabrication of c-BN film.