Multi-wire Electrical Discharge Machining for Silicon Carbide Part 2

Productivity Improvement of SiC Wafer by 40-wire EDM

Abstract

In this paper, forty-wire electrical discharge machining and multi-wire EDM phenomenon are investigated. In a standpoint of science, multi-wire EDM phenomenon is unexplained. To solve this problem, we observed parallel electrical discharge phenomenon between a wire electrode and a workpiece via high-speed camera. With the aim of productivity improvement of SiC wafers, forty-wire EDM was applied for silicon carbide material which is 100 mm thick. we successfully obtained the average ditch width of 208 µm for forty ditches.