Study on material removal mechanism for SiO₂-CMP

Quantitative evaluation on adhesion phenomenon

Abstract

Material removal mechanism of SiO2-CMP has been studied using SiO2 coated AFM stylus as a model experiment instead of fine particle attached to the SiO2 thin film. This method has some issues because AFM stylus did not absorb CMP phenomena. We evaluate the size of SiO2 fine particles before and after polishing, as result the size increased during CMP process because of the adhesion from SiO2 reactive layer.