Abstract
Development of high efficient and high accuracy slice processing technology is required for realizing the high quality and low cost large SiC wafer. Our target of high speed slicing is slicing a 6 inch SiC single crystal ingot in about 9 hours. This slicing speed is about 10 times higher than the loose abrasive slurry sawing. The slicing speed and the slicing accuracy are in the relationship of trade-off. Therefore, in this research, we have realized the high wire speed of a multi wire saw and we have studied the high speed slicing technique of SiC single crystal ingot aiming at reduction of sliced wafers SORI. As a result, we found out that the high speed slicing is possible and the warp of sliced wafers become small, as wire speed becomes high. We confirmed to improve the relation of a trade-off between the slicing speed and the SORI of the sliced wafer by high wire speed. We could get wafers of about 25 μm SORI in slicing a 4 inch SiC single crystal ingot in about 4 hours (which slices a 6 inch SiC single crystal ingot in about 9 hours by area conversion).
