Development of dry planarization method using a transport of active species

processing of the silicon carbide substrate

Abstract

There is generally a need for high efficiency flattening processing method of a next generation of semiconductor substrate such as SiC, GaN and diamond in order to commercialize these materials. Plasma Chemical Vaporization Machining (PCVM) method at atmospheric pressure is well known as the high efficiency processing, but this processing method does not have the effect of flattening. In such circumstances, we devised new flattening processing method by adsorbing F radicals to a flat plate of a reference plane and transporting F radicals to the surface of sample. In this report, we report on the processing results of SiC substrates by the new flattening processing method.