Proceedings of JSPE Semestrial Meeting
2016 JSPE Autumn Conference
Session ID : F36
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Self-propagating exothermic reaction behavior of Ti-SiOx multilayer films prepared by dual source sputtering
*Shozo InoueKeita InoueShunsuke KanetsukiShugo MiyakeTakahiro Namazu
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Abstract
We have been exploring a Ni-free material showing stable self-propagating reaction for medical use, and reported that Ti-Si multilayer films could be a promising candidate. However, the reaction of this material was found to be so sensitive that handling of the films was not easy. The purpose of this work is to control the reaction behavior of the multilayer films with using SiOx layer as an alternative of Si layer. The effects of Ti/SiOx thickness ratio, bilayer thickness and total thickness of Ti-SiOx multilayer films upon their reaction behavior were investigated.
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© 2016 The Japan Society for Precision Engineering
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