Development of form measurement of semiconductor structure (3rd Report)

Measurement of FinFET profile using diagonal cutting CD-SEM images

Abstract

In semiconductor industry, in order to achieve a high yield rate, the measurement of the products is important. By the technical development, the circuit element of semiconductor is getting smaller and more complicated. However, there is not clear standard about the measurement of line profile as a critical dimension. In this research, we aim to establish a measurement method for new structure of semiconductor, FinFET. FinFET has 3D structure unlike conventional semiconductor structures. In this report, we compare the measurement using diagonal cutting CD-SEM images and the measurement using TEM images, and show the effectiveness of diagonal cutting CD-SEM images.