Proceedings of JSPE Semestrial Meeting
2017 JSPE Autumn Conference
Session ID : G28
Conference information

Host: The Japan Society for Precision Engineering

Name : 2017 JSPE Autumn Conference

Location : [in Japanese]

Date : September 20, 2017 - September 22, 2017

Si epitaxial growth by on-site generated SiH4 using narrow-gap hydrogen plasma
*Norihisa Takei, Hiroaki Kakiuchi, Kiyoshi Yasutake, Hiromasa Ohmi
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Keywords: plasma, CVD, silicon, thin film
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[in Japanese]
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© 2017 The Japan Society for Precision Engineering
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