Development of plasma fusion CMP for hard-to-process materials

Evaluation of Processing characteristics of GaN substrate with plasma fusion CMP using Ar plasma

Abstract

Plasma fusion CMP was developed for aiming to establish a high-efficiency polishing process of the hard-to-process materials. In this study, plasma fusion CMP using Ar gas was applied to processing of GaN substrate to be compatible high-efficiency processing and low processing cost. It was achieved that the half of the total carrier gas volume for plasma generation was changed to Ar gas from He gas by using a bubbling method. At the same time, the removal rate of the Ar/He/O2 gas was higher than the removal rate of the He/O2 gas