Host: The Japan Society for Precision Engineering
Name : 2019 JSPE Spring Conference
Location : [in Japanese]
Date : March 13, 2019 - March 15, 2019
Pages 548-549
SiC is a kind of promising semiconductor material, but it is difficult to realize high-precision and highly efficient polishing of SiC, owing to its high hardness and high chemical inertness. To obtain atomically smooth surface with high efficiency, we proposed ultrasonic assisted electrochemical mechanical polishing (UAECMP). In this study, effects of application of ultrasonic vibration and mass concentration of the NaCl aqueous electrolyte on the anodic oxidation rate of SiC substrate were investigated.