プラズマCVD成膜条件のパラメータ設計

抄録

Shrinking device features demands improved fabrication technology. In silicon nitride CVD(SiN CVD), technical requirements demand the capability to form thinner films. In an initial attempt to form thirnner films by shortening the depostion time, there were two problems, breakdown voltage ana thickness uniformity, that could not be solved by simply tuning the signal factor. An attempt was therefore made to optimize the basic characteristics required in a silicon nitride film, namely its insulation performance, through an experiment. This resulted not only in an improvement in the basic insulation perormance of the silicon nitride film, but also in a solution to the problem of controllability of the film thicness. Another positive result was that the evaluation process,which would normally have taken two months, was completed in one week of actual work.