パワーMOS裏面電極特性の向上

抄録

A　power　MOSFET　has　been　used　as　a　reliable　switching　device　in　automotive　electronics.　The increasing　applications　of　electronics　system　in　the　car　requires　a　lower　"ON-resistance",　the resistance　when　the　system　is　in　use.　Normally,　reduction　of　On-resistance　is　achieved　by miniaturizing　the　unit.　ln　this　paper,　however,　On-resistance　was　minimized　through　the improvement　of　the　drain　electrode　process.　As　a　result,　the　drain　contact-　resistance　was　reduce　by　a factor　of　eight,　showing　the　potential　of　miniaturizing　the　device　increasing　the　functional　capacity　and reducing　manufacturing　cost.　ln　addition,　the　drain　contact-resistance　become　less　sensitive　to atmospheric　temperature　test　and　thermal　cycles.　The　technology　developed　in　this　study　can　be applied　to　a　wide　range　of　similar　devices.