1991 Volume 9 Issue 4 Pages 537-544
The valence Auger spectra have been studied in order to understand interatomic chemical bonding across the interface between metals and ceramics. SiO2 was adopted as the ceramic and Ti was used as the metal. Ti/Si interface was also analized to comprehend the characteristic features of Si-O, Ti-O and Ti-Si bond in spectra. Ti was deposited on SiO2 and Si substrates under high vacuum environment about 5×10-4 Pa. Ti/SiO2 was annealed at 473K for 1800s. Ti/Si was annealed at 823K for 3600 s. Some of the spectral feature observed on the Ti/Si interface were applicable to understand the chemical bonding at the Ti/SiO2 interface. The Ti-O bond was detectable at the interface by the intensity ratio of Ti-LM23M45/Ti-LM23M23. The Si-O bond was also detectable from the energy of Si -LVV peaks. It was found to be difficult to comfirm the existence of Ti-Si bonds at the Ti/SiO2 interface. A damage induced by Ar-and electron-bombardment was observed. It didn't disturb the detection of Ti-O and Si-O bonds.
