Development of Semiconductor Preamplifier with Radiation Hardness

Abstract

A semiconductor preamplifier for use in intense radiation monitors has been developed. Semiconductor devices, particularly those using integrated circuits, are prone to failure in high radiation environments. This preamplifier consists of radiation tolerant junction gate field effect transistors (J-FETs) and a differential pair of J-FETs with regulated bias current for reducing radiation effects on the input circuit. The resulting semiconductor preamplifier can withstand more than 100 kGy of gamma radiation.