RADIOISOTOPES
Online ISSN : 1884-4111
Print ISSN : 0033-8303
ISSN-L : 0033-8303
3.6 Application to the semiconductor process
Takashi MURAKAMI
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Keywords: ion beam, semiconductor, large-scale integration (LSI), crystal defect, charge neutralization, channeling, shallow junction, silicon on insulator
JOURNAL FREE ACCESS

1995 Volume 44 Issue 10 Pages 749-753

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