Abstract
This paper describes the latest analysis results and the deduced physical mechanism of imprint characteristics, which critically affect data retention property of ferroelectric memory (FeRAM), and demonstrates advanced FeRAM reliability using a novel process technology to overcome this problem. Analysis of two-mode behavior in time and temperature dependence of imprint has revealed that the motion of oxygen vacancies and electrons are simultaneously involved in physical mechanism behind it. Completely encapsulated hydrogen barrier technology, which enables us to suppress the creation of these mobile charges by eliminating hydrogen reduction of ferroelectric material, has realized the excellent data retention property up to 1000h at 125℃.
