Copper test pieces were diffusion-annealed in an evacuated capsule at 1073K for 3.6ks with chips of a Cu-Zn alloy as a zinc vapor source. The test pieces were homogenizing-annealed or oxidized at 1073K for 1.8-60.3ks.
Variations in the observed surface concentration of zinc with homogenizing-annealing time differed from those calculated by the equation reported by Whittle, but coincided approximately with those caluculated using an equation taking into account the concentration-dependence of interdiffusion coefficients.
In the oxidation experiments, sudden increases in oxide layer thickness were found after a certain oxidation time. A definite difference was found between observed values for the variations in surface concentration of zinc with oxidation time and the theoretical values obtained by Whittle.