抄録
A magnetic sector type ion mixing machine has been developed for surface modification research purposes. High current refractory-metal ion beams (e.g. Cr+: 0.82mA) were obtained by modifying a conventional Freeman type ion source.
A gas assisted ion mixing method is proposed in which a Ti compound film can be formed from evaporated Ti molecules and a gas species ion beam in the same gas environment. This proposal has been verified by high rate TiN deposition using an N2+ ion beam and N2 gas flow, with the following results: (1) Crystallinity of the deposited TiN film changed from a preferential orientation of (111) to (200) with increasing N2+ ion beam energy dose; (2) TiN films having a Vickers hardness of >2000 was formed by small current of N2+ ion beam radiation; (3) the hardness and crystallinity of TiN films were closely related; and (4) this method may realize high-rate deposition of hard TiN films (≥20Å/sec).
