Abstract
We studied the relationship between the properties and brightness of ZnS: TbFx phosphor films synthesized under different sputtering conditions.
We clarified that the F/Tb ratio in films, ZnS (111) lattice plane distance (d), and the half width of the ZnS (111) peak profile (Δ2θ) markedly influenced emission brightness.
These properties were varied with sputtering conditions such as RF power, sputtering gas pressure, substrate and annealing temperatures.
We found the optimum conditions for synthesizing a brighter green ZnS: TbFx phosphor film to be 125W RF power, 1.33Pa sputtering gas pressure, 200°Csubstrate temperature and 300°Cannealing temperature.
