半導体シリコン工業の動向
1984 年 100 巻 1152 号 p. 160-167
詳細
1984 年 100 巻 1152 号 p. 160-167
Based on high growth of IC, production rate of Silicon crystals has been increased by average 33% per year in these 5 years.
During this period, the diameterof Silicon crystals is shifted from 4 in. to 5 in., furthermore 6 in. diameter Silicon crystals will be required in the near future.
In connection with the technology of Silicon wafers for VLSI, the oxygen and carbon concentration must be controlled precisely to reduce its distribution in wafer. Also wafer flatness is required to be 3-4 microns in TTV (Total thickness variation).
