高純度シリコンの製造に関する研究 (第1報)
電界内のSiCl4の水素還元
1961 年 77 巻 878 号 p. 573-578
詳細
1961 年 77 巻 878 号 p. 573-578
The reduction of SiCl4 with hydrogen in the electric field was studied. Using heated tantalum filament at 1, 150°C with A. C. as cathode, high voltage up to 3kV was maintained between the cathode and the cylindrical tantalum anode. These were set in the reaction tube of quartz. The mixed gases of SiCl4 and hydrogen were introduced into the tube, and the deposition of silicon was carried at about 1, 150°C on the cathode. The higher the voltage, the more the yield of silicon increased. The effect of the concentration of SiCI4 in the gas mixture on the yield was studied.
The appearances of the deposition on the filament were observed microscopically and with naked eye. The tantalum was entirely removed from the deposits with leaching in hydrofluoric acid.
