資源と素材
Online ISSN : 1880-6244
Print ISSN : 0916-1740
ISSN-L : 0916-1740
三菱マテリアルグループの半導体シリコンの製造
萩野 貞明竹口 正勝幸野 博南 秀旻
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ジャーナル フリー

1993 年 109 巻 12 号 p. 1191-1197

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The products for semiconductor silicon provided by Mitsubishi Materials Group are high purity poly-crystalline silicon, chlorosilanes, single-crystal ingot and wafers in polished, epitaxial, layer buried, diffused and SOI forms.
The starting material for semiconductor silicon is industrial metallic silicon (98% pure) that is imported from foreign countries.Hi-Silicon Co.'s plants produce the high purity poly-crystalline silicon from this raw material using the described process.
Dislocation free single-crystalline silicon is grown from the melt in the quartz crucible that has minimum bubbles and little contamination
It is most important that the micro-defects and other contamination in the bulk crystal as well as on the surface of wafer are minimized.The state of micro-defects in the bulk crystal which contains impurities such as oxygen is influenced by the heat treatment process.
The concepts for wafer processing from slicing through polishing and cleaning are briefly described.
As ULSI devices become more highly integrated, it is very important to inspect precisely for defects and contamination. We will show the equipment that is used for analyzing these defects, contamination and morphological micro surfaces.
New technologies such as SOI, continuous CZ and continuous CZ combined with magnetic fields are also briefly described.

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© The Mining and Materials Processing Institute of Japan
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