Controlled Czochralski Crystal Growth

抄録

The Czochralski process is well known as a practical approach to producing monocrystals from molten semiconductor material. In this paper, we propose a thermal-capillary model with given desired geometry for Czochralski process, and we analyze it from the mathematical point of view. Actually we consider an enthalpy formulation of the model, which is a parabolic variational problem defined over a time-dependent domain, and we give a related existence result with some comments.