Transactions of the Society of Instrument and Control Engineers
Online ISSN : 1883-8189
Print ISSN : 0453-4654
ISSN-L : 0453-4654
Application of New Type Si Diode to A-D Converter
Toyoji FUKAMIKazuaki HOMMAYasumasa KOBAYASHI
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1965 Volume 1 Issue 3 Pages 255-260

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Abstract

Modern semiconductor technology is making progress at a very rapid rate, and the new devices such as hall-coducer and other many semiconductor translators are being employed in many fields of instrumentation and control engineering.
A new semiconductor device-p-i(t) or p-i(t)-n type Si diode-has been developed as a negative resistance characteristic diode and oscillation diode, whose oscillation is produced by the action of magnetic field. The oscillation frequency has good linear relation with the applied magnetic field.
The negative resistance characteristic diode is useful for a switching device and a memory element in connecting with electric circuits, and also the oscillation phenomenon of the diode makes it much easier to detect the intensity of magnetic field as a digital value by measuring the oscillation-frequency.
In this present paper, some examples of applying the new type Si diode to analog-digital converter are described.

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