Abstract
We propose a new process of sol-gel casting. The process consists of the dispersion of fine crystalline particles in a sol-gel derived precursor solution followed by casting and annealing at relatively low temperatures. In this paper, we introduce the basic concepts for optimizing the process parameters. Dense ferroelectric PMN-PZT films with the thickness of 1μm were formed on a Si wafer by a single coating operation. The thick PMN-PZT film formed with the optimized process parameters showed a fairly good ferroelectricity with a good dielectric property.
