Specific Synchrotron Radiation Facilities Research Report
Online ISSN : 2760-5434
Section B
HAXPES Analysis of IGZO Thin Film Transistors with HfO2 as Gate Insulator
Tetsuya Miyazawa, Mototaka Ochi, Hiroshi Goto, Masaharu Kobayashi
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Keywords: 2023B2021, 2024B1627, BL09XU
JOURNAL OPEN ACCESS

2026 Volume 14 Issue 4 Pages 296-300

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Abstract
[in Japanese]
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この記事はクリエイティブ・コモンズ [表示 4.0 国際]ライセンスの下に提供されています。
https://creativecommons.org/licenses/by/4.0/deed.ja
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