Abstract of annual meeting of the Surface Science of Japan
The Joint Annual Symposium of the Vacuum Society of Japan and the Surface Science Society of Japan (SVSS'10)
30th Annual Symposium of the Surface Science Society of Japan / 51th Annual Symposium of the Vacuum Society of Japan
The Vacuum Society of Japan / The Surface Science Society of Japan
Session ID : 4Ca-10
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November4
Characterization of gate oxide formed by the nitric acid oxidation of Si (NAOS) method and ultra-low power submicron TFTs with NAOS gate oxide
*Taketoshi MatsumotoMikihiro YamadaHiroshi TsujiKenji TaniguchiYasushi KubotaShigeki ImaiSumio TerakawaHikaru Kobayashi
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[in Japanese]

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© 2010 The Surface Science Society of Japan/the Vacuum Society of Japan
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