炭素
Online ISSN : 1884-5495
Print ISSN : 0371-5345
ISSN-L : 0371-5345
CVD法によるグラファイト薄膜の低温作製
菊地 理恵湯田 坂雅子松井 丈雄大木 芳正太田 悦郎吉村 進
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1996 年 1996 巻 171 号 p. 13-17

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Thin films of graphite were formed by chemical vapor deposition using two kinds of precursors, 2, 6-di (2', 6'-dimethy1-1'-naphthoyl)-naphthalene (0), and 2-methyl-1, 2'-naphtylketone (II). Structures of the films were studied by X-ray diffraction and Raman scattering spectra. The graphite formation temperatures on Ni using (0) and (II) were found to be above 800°C and 600°C, respectively. When the dehydrogenation from the starting materialis enhanced by Ni below 700°C, the graphite film could be obtained on the Ni substrate.

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