1991 年 77 巻 11 号 p. 1972-1979
Experiments were conducted to determine sputtering yields for various materials under a practical sputtering condition of Scanning Auger Microscopy (SAM) and Secondary Ion Mass Spectrometry (SIMS).
(1)Sputtering yields for Al, Ti, Cr, Mn, Fe, Ni, Cu, Zn, W and Ta are obtained for Ar+ ions with bulk specimens. The experimental value of each element is larger than that calculated with semi-empirical formula for normal incidence of Ar+ ions.
(2)Sputtering yields for Al, Cr, Mn, Fe and Ni are obtained for irradiation with O2+ ions and N2+ ions with bulk specimens.
(3)Sputtering yields for Al, Cr, Mn, Fe, Ni and Cu are obtained for irradiation with Ar+ ions, O2+ ions and N2+ ions with film specimens evaporated on stainless steel. These values nearly agree to those obtained with polycrystalline bulk specimens for each element.
(4)Spuuttering yield of Fe-Ni alloy for Ar+ ions increases with Ni concentration up to 25.6 mass%.
(5)Sputtering yield for Cr2O3 is obtained for Ar+ ions and O2+ ions with the specimen prepared by thermal oxidation of Cr-evaporated glass with known coating weight.
Some of the results are applied to conversion of sputtering time to the sputtered amount in the depth-profiles. These results agree with those obtained with other techniques.