抄録
The thermoelectric properties of TiNiSn1-xSbx (0 ≤ x ≤ 0.05) prepared by arc melting are measured up to 800 K
to obtain ZT. Hall effect measurements and ab initio calculation using AkaiKKR are performed to confirm the Sb
substitution effect. The density of states before and after substitution show that Sb acts as a donor. Thermoelectric
properties show that the absolute values of the electrical resistivity and Seebeck coefficient decreased with
increasing x while the thermal conductivity increased. This is consistent with the carrier density-dependent trends
when the carrier density increases. Hall effect measurements at room temperature also show that the carrier density
increases with increasing x. Thus, the sample with the maximum ZT is TiNiSn0.99Sb0.01, with a value of ZT = 0.42
at 750 K. It can be said that Sb substitution for TiNiSn results in carrier doping and, at the optimum amount of
substitution, improves the thermoelectric performance.
