Photoluminescence Study of Polycrystalline CuGaSe2 Thin-Films Grown by Three-stage Evaporation Method

Muhammad Monirul Islam; Hajime Shibata; Koji Matsubara; Shigeru Niki; Katsuhiro Akimoto; Takeaki Sakurai

doi:10.57386/tmc.2016.0_12

2016

DOI https://doi.org/10.57386/tmc.2016.0_12

会議情報

主催: 公益社団法人応用物理学会　多元系化合物・太陽電池研究会

会議名: 平成28年度　応用物理学会「多元系化合物・太陽電池研究会」年末講演会

開催地: 12月9日（金）：国立研究開発法人産業技術総合研究所福島再生可能エネルギー研究所/12月10日（土）：ふくしま磐梯熱海温泉ホテル華の湯

開催日: 2016/12/09 - 2016/12/10

Photoluminescence Study of Polycrystalline CuGaSe₂ Thin-Films Grown by Three-stage Evaporation Method

Muhammad Monirul Islam, Hajime Shibata, Koji Matsubara, Shigeru Niki, Katsuhiro Akimoto, Takeaki Sakurai

著者情報

会議録・要旨集フリー

p. 12-13

詳細

抄録

CuGaSe₂ thin films with different Cu/Ga ratio were studied using photoluminescence (PL) method. Measurement at 1.4 K shows asymmetrically broadened PL spectra for all the samples where PL-peaks shift to lower energy with a decrease of the Cu/Ga ratio. Excitation power and temperature dependent PL spectra were explained using donor to acceptor pair transition under the influence of potential fluctuation.

責任著者(Corresponding author)

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