Name : [in Japanese]
Location : [in Japanese]
Date : December 09, 2016 - December 10, 2016
Pages 29-32
The relationship between energy band discontinuity and electrical properties of p-n heterointerface for tin monosulfide (SnS) based solar cells are investigated. Typical trap activation energy (Ea) value for Cd0.7Zn0.3S/SnS, and Mg0.2Zn0.8O/SnS-based solar cells were higher than the values for CdS/SnS, and Zn0.7Sn0.3O/SnS-based solar cells. These experimental result confirmed that an appropriate band structure and a high quality p-n interface are indispensable for the realization of high efficiency SnS based solar cells.
