Effect of low pressure annealing on SnS thin films grown by sulfurization

Keisuke Asaka; Hiroki Sumi; Atsushi Okubo; Ishwor Khatri; Mutsumi Sugiyama

doi:10.57386/tmc.2016.0_33

2016

DOI https://doi.org/10.57386/tmc.2016.0_33

Conference information

Name : [in Japanese]

Location : [in Japanese]

Date : December 09, 2016 - December 10, 2016

Effect of low pressure annealing on SnS thin films grown by sulfurization

Keisuke Asaka, Hiroki Sumi, Atsushi Okubo, Ishwor Khatri, Mutsumi Sugiyama

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CONFERENCE PROCEEDINGS FREE ACCESS

Pages 33-35

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Abstract

The effect of low pressure annealing on SnS thin films and solar cells grown by sulfurization was investigated to prevent the formation of extra phases. The SnS thin film grown by sulfurization is annealed in a vaccum. XRD and Raman measurement showed that this SnS thin film was without the formation of extra phases such as SnS₂ or Sn₂S₃.

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