Influence of the substrate temperature at Cu-Sn precursor preparation for the Cu₂SnS₃ films

Abstract

Effects of substrate temperature for the deposited Cu₂SnS₃ thin films using vacuum evaporation method ware investigated. The diffraction peak attributable to the monoclinic Cu₂SnS₃ crystal was obtained at any substrate temperature. It is estimated that the band gap of thin films is 0.94-1.03eV. The voids in the thin films decrease as the substrate temperature increases.