2016
Conference information
Name : [in Japanese]
Location : [in Japanese]
Date : December 09, 2016 - December 10, 2016
Fabrication of ZnO/SnS pn junction by evaporation method
Pages 51-54
Details
Name : [in Japanese]
Location : [in Japanese]
Date : December 09, 2016 - December 10, 2016
Pages 51-54
SnS thin films have been prepared by vacuum deposition and sulfurization process. Atomic content of SnS films was almost stoichiometry by sulfurization at 300℃ for 60 min. Also, ZnO:Al thin film have been prepared by vacuum deposition and annealing in Air. Then, high transmittance and low electrical resistivity was obtained after annealing in air at 260℃ for 45 min. We fabricated n-ZnO:Al/p-SnS on FTO/SLG substrate by these methods and measured electrical property diode made. As a result, diode characteristic was obtained with a threshold voltage of 0.5 V.
