2016
Conference information
Name : [in Japanese]
Location : [in Japanese]
Date : December 09, 2016 - December 10, 2016
Fabrication of SnS Thin Films by sol-gel method
Pages 47-50
Details
Name : [in Japanese]
Location : [in Japanese]
Date : December 09, 2016 - December 10, 2016
Pages 47-50
The SnS films were deposited on soda-lime glass substrate by sol-gel method. We have also confirmed that the thin films have a SnS structure after annealing in N2 at 300℃. From the results of XPS measurements, it is found that Sn state is Sn2+ and Sn4+ in the films. In addition, XPS data show desorption of S atoms from the surface during annealing in vacuum. We have obtained the bandgap energy of 1.2 eV for the films annealed in N2 and air atmosphere.
