Changes in different phase of PLD method CuInS2 thin film by S annealing temperature

Hajime Shimada; Yong-Gu Shim; Kazuki Wakita

doi:10.57386/tmc.2018.0_19

2018

DOI https://doi.org/10.57386/tmc.2018.0_19

Conference information

Name : International Workshop on Ternary and Multinary Compounds

Location : [in Japanese]

Date : November 30, 2018 - December 01, 2018

Changes in different phase of PLD method CuInS₂ thin film by S annealing temperature

Hajime Shimada, Yong-Gu Shim, Kazuki Wakita

Author information

CONFERENCE PROCEEDINGS FREE ACCESS

Pages 19-22

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Abstract

Sulfur anneal treatment of CuInS₂ films deposited by PLD method was carried out. For S anneal treatment, the composition ratio of S was performed to be more 50% and the crystal grain size became larger. In addition, it was confirmed that different phases such as Cu₂S which were observed on as-deposited films, disappeared by anneal treatment with temperatures more than 550 ℃.

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