Study on fabrication method of Cu2Sn1-xGexS3 thin film by sol-gel sulfurization method

Kyouhei Yamamoto; Kunihiko Tanaka

doi:10.57386/tmc.2018.0_43

2018

DOI https://doi.org/10.57386/tmc.2018.0_43

Conference information

Name : International Workshop on Ternary and Multinary Compounds

Location : [in Japanese]

Date : November 30, 2018 - December 01, 2018

Study on fabrication method of Cu₂Sn_1-xGe_xS₃ thin film by sol-gel sulfurization method

Kyouhei Yamamoto, Kunihiko Tanaka

Author information

CONFERENCE PROCEEDINGS FREE ACCESS

Pages 43-46

Details

Abstract

Cu₂SnS₃(CTS) can be adjusted to a band gap energy suitable for a solar cell by adding Ge. A method for preparing Cu₂Sn_1-xGe_xS₃(CTGS) thin films by sol-gel sulfurization method was investigated. Precursors were deposited by spin coating of Cu, Sn and Ge containing solution. The precursors were sulfurized at H₂S(3%)+N₂ atmosphere. XRD analysis of the samples showed shifting CTS peaks.

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