ゾルゲル硫化法を用いたMo基板上における Cu₂Sn_1-xGe_xS₃薄膜の作製

抄録

Preparation of Cu₂Sn_1-xGe_xS₃(CTGS) thin films on Mo substrates by sol-gel sulfurization method was investigated. To prevent degradation of a Mo layer, Cu-Sn low concentration solution was coated on the Mo layer, after then Cu-Sn-Ge high concentration solution was coated. The precursor was sulfurized in H₂S (3%) + N₂ atmosphere. XRD patterns of deposited films showed a peak between Cu₂SnS₃ and Cu₂GeS₃.