Evaluation and optimization of the effect of valence band offset on CsPbI3 perovskitethin film solar cells using device simulation

Tomohiro Nishikawa; Yu Kawano; Takahito Nishimura; Jakapan Chantana; Mavlonov Abdurashid; Takashi Minemoto

doi:10.57386/tmc.2020.0_14

2020

DOI https://doi.org/10.57386/tmc.2020.0_14

Conference information

Name : International Workshop on Ternary and Multinary Compounds

Location : [in Japanese]

Date : December 12, 2020

Evaluation and optimization of the effect of valence band offset on CsPbI₃ perovskitethin film solar cells using device simulation

Tomohiro Nishikawa, Yu Kawano, Takahito Nishimura, Jakapan Chantana, Mavlonov Abdurashid, Takashi Minemoto

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CONFERENCE PROCEEDINGS FREE ACCESS

Pages 14-17

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Abstract

The effect of valence band offset (VBO) on the absorber and hole-transporting layer (HTL) of CsPbI₃ perovskite thin film solar cells (PVKSCs) has been analyzed by device simulations. The device parameters used in the simulations were determined by reproducing the CsPbI₃-PVKSCs on Solar Cell Capacitance Simulator (SCAPS), which reported a conversion efficiency of 19%. The results suggest that the VBO should be in the range of -0.2 eV to +0.2 eV to achieve a conversion efficiency above 19%.

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