Structural optimization of Cu2(Sn,Ge)S3 solar cells by applying (Zn, Mg) O buffer layer

Haruki Hayashi; Jakapan Chantana; Takahito Nishimura; Yu Kawano; Takashi Minemoto

doi:10.57386/tmc.2020.0_31

2020

DOI https://doi.org/10.57386/tmc.2020.0_31

Conference information

Name : International Workshop on Ternary and Multinary Compounds

Location : [in Japanese]

Date : December 12, 2020

Structural optimization of Cu₂(Sn,Ge)S₃ solar cells by applying (Zn, Mg) O buffer layer

Haruki Hayashi, Jakapan Chantana, Takahito Nishimura, Yu Kawano, Takashi Minemoto

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CONFERENCE PROCEEDINGS FREE ACCESS

Pages 31-34

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Abstract

(Zn,Mg)O is applied to replace conventional ZnO as a second buffer layer of Cu₂(Sn,Ge)S₃ (CTGS) solar cells to optimize conduction band structure. Bandgap energy (E_g) of the (Zn,Mg)O films was changed from 3.20 to 3.65 eV by varying Mg/(Mg+Zn) from 0 to 0.257. The highest conversion efficiency of 4.5% was realized at the E_g of 3.55 eV owing to minimization of interfacial recombination.

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